Alexander Y. Kozhanov

Associate Research Professor in the Department of Electrical and Computer Engineering

Appointments and Affiliations

  • Associate Research Professor in the Department of Electrical and Computer Engineering
  • Member of the Duke Quantum Center

Contact Information

  • Email Address: alexander.kozhanov@duke.edu

Education

  • M.S. Lomonosov Moscow State Universty (Russia), 2003
  • Ph.D. Lomonosov Moscow State Universty (Russia), 2006
  • University of Maryland, College Park, 2021

Courses Taught

  • VMS 325L: Optics and Photonics
  • PHYSICS 320L: Optics and Photonics
  • ECE 899: Special Readings in Electrical Engineering
  • ECE 524: Introduction to Solid-State Physics
  • ECE 340L: Optics and Photonics

Representative Publications

  • Yu, Yichao, Keqin Yan, Debopriyo Biswas, Vivian Ni Zhang, Bahaa Harraz, Crystal Noel, Christopher Monroe, and Alexander Kozhanov. “In situ midcircuit qubit measurement and reset in a single-species trapped-ion quantum computing system.” Physical Review Research 7, no. 4 (December 31, 2025). https://doi.org/10.1103/qfvd-93lw.
  • Kozhanov, A., Y. Yu, L. Zhukas, L. Feng, D. Biswas, B. Harraz, K. Yan, V. Zhang, C. Noel, and C. Monroe. “Next-generation trapped-ion quantum computing system.” In Quantum 2 0 Proceedings Optica Quantum 2 0 Conference and Exhibition, 2023. https://doi.org/10.1364/QUANTUM.2023.QM3A.2.
  • Mitrofanov, A., G. Chen, A. Kozhanov, and S. Urazhdin. “Exchange bias without directional anisotropy in permalloy/CoO bilayers.” Physical Review B 104, no. 14 (October 1, 2021). https://doi.org/10.1103/PhysRevB.104.144413.
  • Senevirathna, M. K. I., M. Vernon, G. A. Cooke, G. B. Cross, A. Kozhanov, and M. D. Williams. “Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry.” Journal of Vacuum Science and Technology B 38, no. 4 (July 1, 2020). https://doi.org/10.1116/6.0000138.
  • Senevirathna, MK Indika, Michael D. Williams, Graham A. Cooke, Alexander Kozhanov, Mark Vernon, and Garnett B. Cross. “Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 38, no. 3 (May 1, 2020). https://doi.org/10.1116/1.5144500.